RAMMon v1.0 Build: 1012 built with SysInfo v1.0 Build: 1049
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Memory Summary For NOKZ_PC
Number of Memory Devices: 2	Total Physical Memory: 8159 MB (8192 MB)
				Total Available Physical Memory: 6202 MB
				Memory Load: 23%	

ItemSlot #1Slot #2Slot #3Slot #4
Ram Type DDR3 DDR3 Not Populated Not Populated
Maximum Clock Speed (MHz) 800.00 (XMP) 800.00 (XMP)
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Memory Capacity (MB) 4096 4096
Jedec Manufacture Name Patriot Memory (PDP Systems) Patriot Memory (PDP Systems)
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SPD Revision 1.0 1.0
Registered No No
ECC No No
DIMM Slot # 1 2
Manufactured
Module Part # 1600LL Series 1600LL Series
Module Revision 0x0 0x0
Module Serial # 0x0 0x0
Module Manufacturing Location 1 1
# of Row Addressing Bits 15 15
# of Column Addressing Bits 10 10
# of Banks 8 8
# of Ranks 2 2
Device Width in Bits 8 8
Bus Width in Bits 64 64
Module Voltage 1.5V 1.5V
CAS Latencies Supported 6 7 6 7
Timings @ Max Frequency (JEDEC) 7-7-7-20 7-7-7-20
Maximum frequency (MHz) 533.33 533.33
Maximum Transfer Speed (MHz) DDR3-1066 DDR3-1066
Maximum Bandwidth (MB/s) PC3-8500 PC3-8500
Minimum Clock Cycle Time, tCK (ns) 1.875 1.875
Minimum CAS Latency Time, tAA (ns) 13.125 13.125
Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125
Minimum Row Precharge Time, tRP (ns) 13.125 13.125
Minimum Active to Precharge Time, tRAS (ns) 37.500 37.500
Minimum Row Active to Row Active Delay, tRRD (ns) 7.500 7.500
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 50.625 50.625
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 160.000 160.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 37.500 37.500
RZQ / 6 Supported No No
RZQ / 7 Supported Yes Yes
DLL-Off Mode Supported Yes Yes
Maximum Operating Temperature Range (C) 0-95 0-95
Refresh Rate at Extended Operating Temperature Range 2X 2X
Auto-self Refresh Supported Yes Yes
On-die Thermal Sensor Readout Supported No No
Partial Array Self Refresh Supported No No
Thermal Sensor Present No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic
Module Type UDIMM UDIMM
Module Height (mm) 30 30
Module Thickness (front), (mm) 2 2
Module Thickness (back), (mm) 2 2
Module Width (mm) 133.5 133.5
Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0
DRAM Manufacture ID 0 0
# of DRAM Rows 0 0
# of Registers 0 0
Register Manufacturer
Register Type
Register Revision 0 0
XMP Attributes
XMP Revision 1.2 1.2
Enthusiast / Certified Profile
Module voltage 1.65V 1.65V
Clock speed (MHz) 800.00 800.00
Transfer Speed (MHz) DDR3-1600 DDR3-1600
Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum clock cycle time, tCK (ns) 1.250 1.250
Supported CAS latencies 6 7 8 9 6 7 8 9
Minimum CAS latency time, tAA (ns) 10.000 10.000
Minimum RAS to CAS delay time, tRCD (ns) 11.250 11.250
Minimum row precharge time, tRP (ns) 10.000 10.000
Minimum active to precharge time, tRAS (ns) 29.875 29.875
Supported timing at highest clock speed 8-9-8-24 8-9-8-24
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Active to Auto-Refresh Delay, tRC (ns) 46.500 46.500
Minimum Recovery Delay, tRFC (ns) 125.000 125.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 3.875 3.875
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment
System CMD Rate Mode 2T 2T