RAMMon v1.0 Build: 1008 built with SysInfo v1.0 Build: 1030
PassMark (R) Software - www.passmark.com

Memory Summary For ETHAN-PC
Number of Memory Devices: 2	Total Physical Memory: 16383 MB (16384 MB)
				Total Available Physical Memory: 14005 MB
				Memory Load: 14%
ItemSlot #1Slot #2Slot #3Slot #4
Ram Type Not Populated Not Populated DDR3 DDR3
Maximum Clock Speed (MHz) 800.00 (XMP) 800.00 (XMP)
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Memory Capacity (MB) 8192 8192
Jedec Manufacture Name A-DATA Technology A-DATA Technology
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SPD Revision 1.1 1.1
Registered No No
ECC No No
DIMM Slot # 3 4
Manufactured Year 0 Year 0
Module Part # DDR3 1600G DDR3 1600G
Module Revision 0x0 0x0
Module Serial # 0x75A1 0x7585
Module Manufacturing Location 0 0
# of Row Addressing Bits 16 16
# of Column Addressing Bits 10 10
# of Banks 8 8
# of Ranks 2 2
Device Width in Bits 8 8
Bus Width in Bits 64 64
Module Voltage 1.5V 1.5V
CAS Latencies Supported 5 6 7 8 9 5 6 7 8 9
Timings @ Max Frequency (JEDEC) 9-9-9-24 9-9-9-24
Maximum frequency (MHz) 666.67 666.67
Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1333
Maximum Bandwidth (MB/s) PC3-10666 PC3-10666
Minimum Clock Cycle Time, tCK (ns) 1.500 1.500
Minimum CAS Latency Time, tAA (ns) 13.125 13.125
Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125
Minimum Row Precharge Time, tRP (ns) 13.125 13.125
Minimum Active to Precharge Time, tRAS (ns) 36.000 36.000
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 49.125 49.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 300.000 300.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
RZQ / 6 Supported Yes Yes
RZQ / 7 Supported Yes Yes
DLL-Off Mode Supported Yes Yes
Maximum Operating Temperature (C) 95 95
Refresh Rate at Extended Operating Temperature Range 1X 1X
Auto-self Refresh Supported Yes Yes
On-die Thermal Sensor Readout Supported No No
Partial Array Self Refresh Supported No No
Thermal Sensor Present No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic
Module Type UDIMM UDIMM
Module Height (mm) 30 30
Module Thickness (front), (mm) 2 2
Module Thickness (back), (mm) 2 2
Module Width (mm) 133.5 133.5
Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0
DRAM Manufacture ID 0 0
# of DRAM Rows 0 0
# of Registers 0 0
Register Manufacturer
Register Type
Register Revision 0 0
XMP Attributes
XMP Revision 1.2 1.2
Enthusiast / Certified Profile
Module voltage 1.50V 1.50V
Clock speed (MHz) 800.00 800.00
Transfer Speed (MHz) DDR3-1600 DDR3-1600
Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum clock cycle time, tCK (ns) 1.250 1.250
Supported CAS latencies 5 6 7 8 9 10 5 6 7 8 9 10
Minimum CAS latency time, tAA (ns) 11.250 11.250
Minimum RAS to CAS delay time, tRCD (ns) 11.250 11.250
Minimum row precharge time, tRP (ns) 11.250 11.250
Minimum active to precharge time, tRAS (ns) 30.000 30.000
Supported timing at highest clock speed 9-9-9-24 9-9-9-24
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Active to Auto-Refresh Delay, tRC (ns) 41.250 41.250
Minimum Recovery Delay, tRFC (ns) 300.000 300.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 7.875 7.875
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment
System CMD Rate Mode 0T 0T