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Memory Summary For SEPPUKA-PC
Number of Memory Devices: 3	Total Physical Memory: 12285 MB (12288 MB)
				Total Available Physical Memory: 9976 MB
				Memory Load: 18%	

ItemSlot #1Slot #2Slot #3Slot #4
Ram Type DDR3 DDR3 DDR3 Not Populated
Maximum Clock Speed (MHz) 666.67 (JEDEC) 666.67 (JEDEC) 800.00 (XMP)
Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1333 DDR3-1600
Maximum Bandwidth (MB/s) PC3-10600 PC3-10600 PC3-12800
Memory Capacity (MB) 2048 2048 8192
Jedec Manufacture Name Kingston Kingston Kingston
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SPD Revision 1.0 1.0 1.0
Registered No No No
ECC No No No
DIMM Slot # 1 2 3
Manufactured Week 49 of Year 2010 Week 49 of Year 2010 Week 4 of Year 2014
Module Part # 9905403-174.A00LF 9905403-174.A00LF KHX1600C9D3/8GX
Module Revision 0x0 0x0 0x0
Module Serial # 0x870CDCEA 0x830CEBE2 0xD325279
Module Manufacturing Location 4 4 7
# of Row Addressing Bits 14 14 16
# of Column Addressing Bits 10 10 10
# of Banks 8 8 8
# of Ranks 2 2 2
Device Width in Bits 8 8 8
Bus Width in Bits 64 64 64
Module Voltage 1.5V 1.5V 1.5V
CAS Latencies Supported 6 7 8 9 6 7 8 9 6 7 8 9
Timings @ Max Frequency (JEDEC) 9-9-9-24 9-9-9-24 9-9-9-24
Maximum frequency (MHz) 666.67 666.67 666.67
Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1333 DDR3-1333
Maximum Bandwidth (MB/s) PC3-10600 PC3-10600 PC3-10600
Minimum Clock Cycle Time, tCK (ns) 1.500 1.500 1.500
Minimum CAS Latency Time, tAA (ns) 13.125 13.125 13.125
Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125 13.125
Minimum Row Precharge Time, tRP (ns) 13.125 13.125 13.125
Minimum Active to Precharge Time, tRAS (ns) 36.000 36.000 36.000
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 49.125 49.125 49.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 110.000 110.000 260.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000 30.000
RZQ / 6 Supported Yes Yes Yes
RZQ / 7 Supported Yes Yes Yes
DLL-Off Mode Supported Yes Yes Yes
Maximum Operating Temperature Range (C) 0-95 0-95 0-95
Refresh Rate at Extended Operating Temperature Range 2X 2X 2X
Auto-self Refresh Supported No No No
On-die Thermal Sensor Readout Supported No No No
Partial Array Self Refresh Supported Yes Yes No
Thermal Sensor Present No No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic Standard Monolithic
Module Type UDIMM UDIMM UDIMM
Module Height (mm) 30 30 30
Module Thickness (front), (mm) 2 2 2
Module Thickness (back), (mm) 2 2 2
Module Width (mm) 133.5 133.5 133.5
Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0 Raw Card B Rev. 1
DRAM Manufacture ID 0 0 32941
# of DRAM Rows 0 0 0
# of Registers 0 0 0
Register Manufacturer
Register Type
Register Revision 0 0 0
XMP Attributes
XMP Revision 1.2
Enthusiast / Certified Profile
Module voltage 1.50V
Clock speed (MHz) 800.00
Transfer Speed (MHz) DDR3-1600
Bandwidth (MB/s) PC3-12800
Minimum clock cycle time, tCK (ns) 1.250
Supported CAS latencies 6 7 8 9
Minimum CAS latency time, tAA (ns) 11.250
Minimum RAS to CAS delay time, tRCD (ns) 11.250
Minimum row precharge time, tRP (ns) 11.250
Minimum active to precharge time, tRAS (ns) 33.750
Supported timing at highest clock speed 9-9-9-27
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000
Minimum Active to Auto-Refresh Delay, tRC (ns) 45.000
Minimum Recovery Delay, tRFC (ns) 260.000
Minimum Write Recovery time, tWR (ns) 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 7.875
Write to Read CMD Turn-around Time Optimizations No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment
System CMD Rate Mode 0T