Memory Summary For HARESH-HPLAPTOP
Number of Memory Devices: 2 Total Physical Memory: 8126 MB (8192 MB)
Total Available Physical Memory: 4916 MB
Memory Load: 39%
Item | Module #1 | Module #2 |
Ram Type |
DDR3 |
DDR3 |
Maximum Clock Speed (MHz) |
666.67 (JEDEC) |
666.67 (JEDEC) |
Maximum Transfer Speed (MHz) |
DDR3-1333 |
DDR3-1333 |
Maximum Bandwidth (MB/s) |
PC3-10600 |
PC3-10600 |
Memory Capacity (MB) |
4096 |
4096 |
Jedec Manufacture Name |
Strontium |
Micron Technology |
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SPD Revision |
1.0 |
1.1 |
Registered |
No |
No |
ECC |
No |
No |
DIMM Slot # |
1 |
3 |
Manufactured |
Week 44 of Year 2011 |
Week 39 of Year 2011 |
Module Part # |
SRT4G86S1-H9H |
16JSF51264HZ-1G4D1 |
Module Revision |
0x0 |
0x4431 |
Module Serial # |
0x59A00500 |
0xE94CFA1D |
Module Manufacturing Location |
0 |
15 |
# of Row Addressing Bits |
15 |
15 |
# of Column Addressing Bits |
10 |
10 |
# of Banks |
8 |
8 |
# of Ranks |
2 |
2 |
Device Width in Bits |
8 |
8 |
Bus Width in Bits |
64 |
64 |
Module Voltage |
1.5V |
1.5V |
CAS Latencies Supported |
6 7 8 9 |
5 6 7 8 9 10 |
Timings @ Max Frequency (JEDEC) |
9-9-9-24 |
9-9-9-24 |
Maximum frequency (MHz) |
666.67 |
666.67 |
Maximum Transfer Speed (MHz) |
DDR3-1333 |
DDR3-1333 |
Maximum Bandwidth (MB/s) |
PC3-10600 |
PC3-10600 |
Minimum Clock Cycle Time, tCK (ns) |
1.500 |
1.500 |
Minimum CAS Latency Time, tAA (ns) |
13.125 |
13.125 |
Minimum RAS to CAS Delay, tRCD (ns) |
13.125 |
13.125 |
Minimum Row Precharge Time, tRP (ns) |
13.125 |
13.125 |
Minimum Active to Precharge Time, tRAS (ns) |
36.000 |
36.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) |
6.000 |
6.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) |
49.125 |
49.125 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) |
160.000 |
160.000 |
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|
|
DDR3 Specific SPD Attributes |
|
|
Write Recovery Time, tWR (ns) |
15.000 |
15.000 |
Internal Write to Read Command Delay, tWTR (ns) |
7.500 |
7.500 |
Internal Read to Precharge Command Delay, tRTP (ns) |
7.500 |
7.500 |
Minimum Four Activate Window Delay, tFAW (ns) |
30.000 |
30.000 |
RZQ / 6 Supported |
Yes |
Yes |
RZQ / 7 Supported |
Yes |
Yes |
DLL-Off Mode Supported |
Yes |
Yes |
Maximum Operating Temperature Range (C) |
0-95 |
0-95 |
Refresh Rate at Extended Operating Temperature Range |
2X |
2X |
Auto-self Refresh Supported |
Yes |
Yes |
On-die Thermal Sensor Readout Supported |
No |
No |
Partial Array Self Refresh Supported |
No |
No |
Thermal Sensor Present |
No |
Yes |
Non-standard SDRAM Type |
Standard Monolithic |
Standard Monolithic |
Module Type |
SO-DIMM |
SO-DIMM |
Module Height (mm) |
30 |
30 |
Module Thickness (front), (mm) |
2 |
2 |
Module Thickness (back), (mm) |
2 |
2 |
Module Width (mm) |
67.6 |
67.6 |
Reference Raw Card Used |
Raw Card F Rev. 0 |
Raw Card F Rev. 0 |
DRAM Manufacture ID |
34691 |
32812 |
# of DRAM Rows |
0 |
0 |
# of Registers |
0 |
0 |
Register Manufacturer |
|
|
Register Type |
|
|
Register Revision |
0 |
0 |