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Memory Summary For ROBERTS-PC
Number of Memory Devices: 4	Total Physical Memory: 16302 MB (16384 MB)
				Total Available Physical Memory: 12273 MB
				Memory Load: 24%
ItemModule #1Module #2Module #3Module #4
Ram Type DDR3 DDR3 DDR3 DDR3
Maximum Clock Speed (MHz) 800 (XMP) 800 (JEDEC) 800 (XMP) 800 (JEDEC)
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600 DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800 PC3-12800 PC3-12800
Memory Capacity (MB) 4096 4096 4096 4096
Jedec Manufacture Name A-DATA Technology Hynix Semiconductor (Hyundai Electronics) A-DATA Technology Hynix Semiconductor (Hyundai Electronics)
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SPD Revision 1.0 1.2 1.0 1.2
Registered No No No No
ECC No No No No
DIMM Slot # 1 2 3 4
Manufactured Week 37 of Year 2011 Week 16 of Year 2013 Week 37 of Year 2011 Week 16 of Year 2013
Module Part # DDR3L 1600G HMT451S6AFR8A-PB DDR3L 1600G HMT451S6AFR8A-PB
Module Revision 0x0 0x4E30 0x0 0x4E30
Module Serial # 0x76D7 0x9589604 0x760D 0x9789606
Module Manufacturing Location 0 1 0 1
# of Row Addressing Bits 15 16 15 16
# of Column Addressing Bits 10 10 10 10
# of Banks 8 8 8 8
# of Ranks 2 1 2 1
Device Width in Bits 8 8 8 8
Bus Width in Bits 64 64 64 64
Module Voltage 1.5V 1.5V, 1.35V 1.5V 1.5V, 1.35V
CAS Latencies Supported 6 7 8 9 5 6 7 8 9 10 11 6 7 8 9 5 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC) 9-9-9-24 11-11-11-28 9-9-9-24 11-11-11-28
Maximum frequency (MHz) 667 800 667 800
Maximum Transfer Speed (MHz) DDR3-1333 DDR3-1600 DDR3-1333 DDR3-1600
Maximum Bandwidth (MB/s) PC3-10600 PC3-12800 PC3-10600 PC3-12800
Minimum Clock Cycle Time, tCK (ns) 1.500 1.250 1.500 1.250
Minimum CAS Latency Time, tAA (ns) 13.125 13.125 13.125 13.125
Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125 13.125 13.125
Minimum Row Precharge Time, tRP (ns) 13.125 13.125 13.125 13.125
Minimum Active to Precharge Time, tRAS (ns) 36.000 35.000 36.000 35.000
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000 6.000 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 49.125 48.125 49.125 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 160.000 260.000 160.000 260.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000 30.000 30.000
RZQ / 6 Supported Yes Yes Yes Yes
RZQ / 7 Supported Yes Yes Yes Yes
DLL-Off Mode Supported Yes Yes Yes Yes
Maximum Operating Temperature Range (C) 0-95 0-95 0-95 0-95
Refresh Rate at Extended Operating Temperature Range 2X 2X 2X 2X
Auto-self Refresh Supported Yes No Yes No
On-die Thermal Sensor Readout Supported No No No No
Partial Array Self Refresh Supported No No No No
Thermal Sensor Present No No No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic Standard Monolithic Standard Monolithic
Module Type SO-DIMM SO-DIMM SO-DIMM SO-DIMM
Module Height (mm) 30 30 30 30
Module Thickness (front), (mm) 2 2 2 2
Module Thickness (back), (mm) 2 2 2 2
Module Width (mm) 67.6 67.6 67.6 67.6
Reference Raw Card Used Raw Card F Rev. 0 Raw Card B Rev. 3 Raw Card F Rev. 0 Raw Card B Rev. 3
DRAM Manufacture Hynix Semiconductor (Hyundai Electronics) Hynix Semiconductor (Hyundai Electronics)
XMP Attributes
XMP Revision 1.2 1.2
Enthusiast / Certified Profile
Module voltage 1.35V 1.35V
Clock speed (MHz) 800 800
Transfer Speed (MHz) DDR3-1600 DDR3-1600
Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum clock cycle time, tCK (ns) 1.250 1.250
Supported CAS latencies 5 6 7 8 9 10 5 6 7 8 9 10
Minimum CAS latency time, tAA (ns) 11.250 11.250
Minimum RAS to CAS delay time, tRCD (ns) 11.250 11.250
Minimum row precharge time, tRP (ns) 11.250 11.250
Minimum active to precharge time, tRAS (ns) 30.000 30.000
Supported timing at highest clock speed 9-9-9-24 9-9-9-24
Minimum Row Active to Row Active Delay, tRRD (ns) 5.500 5.500
Minimum Active to Auto-Refresh Delay, tRC (ns) 41.250 41.250
Minimum Recovery Delay, tRFC (ns) 160.000 160.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 7.875 7.875
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment
System CMD Rate Mode 0T 0T