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Memory Summary For XS-3408
Number of Memory Devices: 3	Total Physical Memory: 6142 MB (6144 MB)
				Total Available Physical Memory: 4307 MB
				Memory Load: 29%
ItemSlot #1Slot #2Slot #3Slot #4Slot #5Slot #6
Ram Type DDR3 Not Populated DDR3 Not Populated DDR3 Not Populated
Standard Name DDR3-1333 DDR3-1333 DDR3-1333
Module Name PC3-10600 PC3-10600 PC3-10600
Memory Capacity (MB) 2048 2048 2048
Bus Clockspeed (Mhz) 666.67 666.67 666.67
Jedec Manufacture Name Corsair Corsair Corsair
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SPD Revision 1.0 1.0 1.0
Registered No No No
ECC No No No
DIMM Slot # 1 3 5
Manufactured Year 0 Year 0 Year 0
Module Part # CM3X2G1333C7 CM3X2G1333C7 CM3X2G1333C7
Module Revision 0x0 0x0 0x0
Module Serial # 0x0 0x0 0x0
Module Manufacturing Location 1 1 1
# of Row Addressing Bits 14 14 14
# of Column Addressing Bits 10 10 10
# of Banks 8 8 8
# of Ranks 2 2 2
Device Width in Bits 8 8 8
Bus Width in Bits 64 64 64
Module Voltage 1.5V 1.5V 1.5V
CAS Latencies Supported 6 8 9 6 8 9 6 8 9
Timings @ Max Frequency 9-9-9-24 9-9-9-24 9-9-9-24
Minimum Clock Cycle Time, tCK (ns) 1.500 1.500 1.500
Minimum CAS Latency Time, tAA (ns) 13.500 13.500 13.500
Minimum RAS to CAS Delay, tRCD (ns) 13.500 13.500 13.500
Minimum Row Precharge Time, tRP (ns) 13.500 13.500 13.500
Minimum Active to Precharge Time, tRAS (ns) 36.000 36.000 36.000
Minimum Row Active to Row Active Delay, tRRD (ns) 7.500 7.500 7.500
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 50.625 50.625 50.625
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 110.000 110.000 110.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 37.500 37.500 37.500
RZQ / 6 Supported Yes Yes Yes
RZQ / 7 Supported Yes Yes Yes
DLL-Off Mode Supported Yes Yes Yes
Maximum Operating Temperature (C) 95 95 95
Refresh Rate at Extended Operating Temperature Range 1X 1X 1X
Auto-self Refresh Supported No No No
On-die Thermal Sensor Readout Supported No No No
Partial Array Self Refresh Supported Yes Yes Yes
Thermal Sensor Present No No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic Standard Monolithic
Module Type UDIMM UDIMM UDIMM
Module Height (mm) 31 31 31
Module Thickness (front), (mm) 2 2 2
Module Thickness (back), (mm) 2 2 2
Module Width (mm) 133.5 133.5 133.5
Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0 Raw Card B Rev. 0
DRAM Manufacture ID 0 0 0
# of DRAM Rows 0 0 0
# of Registers 0 0 0
Register Manufacturer
Register Type
Register Revision 0 0 0
XMP Attributes
XMP Revision 1.2 1.2 1.2
Enthusiast / Certified Profile
Module voltage 1.65V 1.65V 1.65V
Clock speed (Mhz) 666.67 666.67 666.67
Minimum clock cycle time, tCK (ns) 1.500 1.500 1.500
Supported CAS latencies 6 7 6 7 6 7
Minimum CAS latency time, tAA (ns) 10.500 10.500 10.500
Minimum RAS to CAS delay time, tRCD (ns) 10.500 10.500 10.500
Minimum row precharge time, tRP (ns) 10.500 10.500 10.500
Minimum active to precharge time, tRAS (ns) 30.000 30.000 30.000
Supported timing at highest clock speed 7-7-7-20 7-7-7-20 7-7-7-20
Minimum Row Active to Row Active Delay, tRRD (ns) 7.500 7.500 7.500
Minimum Active to Auto-Refresh Delay, tRC (ns) 50.643 50.643 50.643
Minimum Recovery Delay, tRFC (ns) 110.000 110.000 110.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 37.500 37.500 37.500
Maximum Average Periodic Refresh Interval, tREFI (us) 7.786 7.786 7.786
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment No adjustment
System CMD Rate Mode 1T 1T 1T