Memory Summary For PC-JOAO
Number of Memory Devices: 2 Total Physical Memory: 3839 MB (4096 MB)
Total Available Physical Memory: 1749 MB
Memory Load: 54%
Item | Slot #1 | Slot #2 |
Ram Type |
DDR2 |
DDR2 |
Maximum Clock Speed (MHz) |
400.00 (JEDEC) |
400.00 (JEDEC) |
Maximum Transfer Speed (MHz) |
DDR2-800 |
DDR2-800 |
Maximum Bandwidth (MB/s) |
PC2-6400 |
PC2-6400 |
Memory Capacity (MB) |
2048 |
2048 |
Jedec Manufacture Name |
Nanya Technology |
Nanya Technology |
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SPD Revision |
1.3 |
1.3 |
Registered |
No |
No |
ECC |
No |
No |
DIMM Slot # |
1 |
2 |
Manufactured |
Week 14 of Year 2009 |
Week 14 of Year 2009 |
Module Part # |
NT2GT64U8HD0BY-AD |
NT2GT64U8HD0BY-AD |
Module Revision |
0x2000 |
0x2000 |
Module Serial # |
0xD8777C15 |
0x296FC13 |
Module Manufacturing Location |
27 |
27 |
# of Row Addressing Bits |
14 |
14 |
# of Column Addressing Bits |
10 |
10 |
# of Banks |
8 |
8 |
# of Ranks |
2 |
2 |
Device Width in Bits |
8 |
8 |
Bus Width in Bits |
64 |
64 |
Module Voltage |
SSTL 1.8V |
SSTL 1.8V |
CAS Latencies Supported |
4 5 6 |
4 5 6 |
Timings @ Max Frequency (JEDEC) |
6-6-6-18 |
6-6-6-18 |
Maximum frequency (MHz) |
400.00 |
400.00 |
Maximum Transfer Speed (MHz) |
DDR2-800 |
DDR2-800 |
Maximum Bandwidth (MB/s) |
PC2-6400 |
PC2-6400 |
Minimum Clock Cycle Time, tCK (ns) |
2.500 |
2.500 |
Minimum CAS Latency Time, tAA (ns) |
15.000 |
15.000 |
Minimum RAS to CAS Delay, tRCD (ns) |
15.000 |
15.000 |
Minimum Row Precharge Time, tRP (ns) |
15.000 |
15.000 |
Minimum Active to Precharge Time, tRAS (ns) |
45.000 |
45.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) |
7.500 |
7.500 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) |
60.000 |
60.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) |
127.500 |
127.500 |
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DDR2 Specific SPD Attributes |
|
|
Data Access Time from Clock, tAC (ns) |
0.400 |
0.400 |
Clock Cycle Time at Medium CAS Latency (ns) |
3.000 |
3.000 |
Data Access Time at Medium CAS Latency (ns) |
0.450 |
0.450 |
Clock Cycle Time at Short CAS Latency (ns) |
3.750 |
3.750 |
Data Access Time at Short CAS Latency (ns) |
0.500 |
0.500 |
Maximum Clock Cycle Time (ns) |
8.000 |
8.000 |
Write Recover Time, tWR (ns) |
15.000 |
15.000 |
Internal Write to Read Command Delay, tWTR (ns) |
7.500 |
7.500 |
Internal Read to Precharge Command Delay, tRTP (ns) |
7.500 |
7.500 |
Address/Command Setup Time Before Clock, tIS (ns) |
0.170 |
0.170 |
Address/Command Hold Time After Clock, tIH (ns) |
0.250 |
0.250 |
Data Input Setup Time Before Strobe, tDS (ns) |
0.050 |
0.050 |
Data Input Hold Time After Strobe, tDH (ns) |
0.120 |
0.120 |
Maximum Skew Between DQS and DQ Signals (ns) |
0.200 |
0.200 |
Maximum Read Data hold Skew Factor (ns) |
0.240 |
0.240 |
PLL Relock Time (ns) |
0.000 |
0.000 |
DRAM Package Type |
Planar |
Planar |
Burst Lengths Supported |
4 8 |
4 8 |
Refresh Rate |
Reduced (7.8us) |
Reduced (7.8us) |
# of PLLS on DIMM |
0 |
0 |
FET Switch External Enable |
No |
No |
Analysis Probe Installed |
No |
No |
Weak Driver Supported |
Yes |
Yes |
50 Ohm ODT Supported |
Yes |
Yes |
Partial Array Self Refresh Supported |
Yes |
Yes |
Module Type |
UDIMM |
UDIMM |
Module Height (mm) |
30.0 |
30.0 |