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Memory Summary For GANDALF
Number of Memory Devices: 2	Total Physical Memory: 8051 MB (8192 MB)
				Total Available Physical Memory: 5650 MB
				Memory Load: 29%
ItemSlot #1Slot #2Slot #3Slot #4
Ram Type DDR3 DDR3 Not Populated Not Populated
Maximum Clock Speed (MHz) 800 (JEDEC) 800 (JEDEC)
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Memory Capacity (MB) 4096 4096
Jedec Manufacture Name G Skill Intl G Skill Intl
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SPD Revision 1.1 1.1
Registered No No
ECC No No
DIMM Slot # 1 2
Manufactured
Module Part # F3-12800CL9-4GBXL F3-12800CL9-4GBXL
Module Revision 0x1 0x1
Module Serial # 0x0 0x0
Module Manufacturing Location 0 0
# of Row Addressing Bits 16 16
# of Column Addressing Bits 10 10
# of Banks 8 8
# of Ranks 1 1
Device Width in Bits 8 8
Bus Width in Bits 64 64
Module Voltage 1.5V 1.5V
CAS Latencies Supported 6 7 8 9 10 11 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC) 11-11-11-28 11-11-11-28
Maximum frequency (MHz) 800 800
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum Clock Cycle Time, tCK (ns) 1.250 1.250
Minimum CAS Latency Time, tAA (ns) 13.125 13.125
Minimum RAS to CAS Delay, tRCD (ns) 13.125 13.125
Minimum Row Precharge Time, tRP (ns) 13.125 13.125
Minimum Active to Precharge Time, tRAS (ns) 35.000 35.000
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 48.125 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 260.000 260.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
RZQ / 6 Supported Yes Yes
RZQ / 7 Supported Yes Yes
DLL-Off Mode Supported Yes Yes
Maximum Operating Temperature Range (C) 0-95 0-95
Refresh Rate at Extended Operating Temperature Range 2X 2X
Auto-self Refresh Supported No No
On-die Thermal Sensor Readout Supported No No
Partial Array Self Refresh Supported No No
Thermal Sensor Present No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic
Module Type UDIMM UDIMM
Module Height (mm) 30 30
Module Thickness (front), (mm) 2 2
Module Thickness (back), (mm) 1 1
Module Width (mm) 133.5 133.5
Reference Raw Card Used Raw Card A Rev. 1 Raw Card A Rev. 1
DRAM Manufacture G Skill Intl G Skill Intl
XMP Attributes
XMP Revision 1.2 1.2
Enthusiast / Certified Profile
Module voltage 1.50V 1.50V
Clock speed (MHz) 800 800
Transfer Speed (MHz) DDR3-1600 DDR3-1600
Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum clock cycle time, tCK (ns) 1.250 1.250
Supported CAS latencies 9 9
Minimum CAS latency time, tAA (ns) 10.875 10.875
Minimum RAS to CAS delay time, tRCD (ns) 10.875 10.875
Minimum row precharge time, tRP (ns) 10.875 10.875
Minimum active to precharge time, tRAS (ns) 29.625 29.625
Supported timing at highest clock speed 9-9-9-24 9-9-9-24
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Active to Auto-Refresh Delay, tRC (ns) 40.875 40.875
Minimum Recovery Delay, tRFC (ns) 260.000 260.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 7.875 7.875
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment
System CMD Rate Mode 2T 2T