RAMMon v1.0 Build: 1016 built with SysInfo v1.0 Build: 1121
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Memory Summary For WILLI-PC
Number of Memory Devices: 2	Total Physical Memory: 16280 MB (16384 MB)
				Total Available Physical Memory: 8847 MB
				Memory Load: 45%	

ItemSlot #1Slot #2Slot #3Slot #4
Ram Type DDR3 DDR3 Not Populated Not Populated
Maximum Clock Speed (MHz) 800 (JEDEC) 800 (JEDEC)
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Memory Capacity (MB) 8192 8192
Jedec Manufacture Name Crucial Technology Crucial Technology
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SPD Revision 1.3 1.3
Registered No No
ECC No No
DIMM Slot # 1 2
Manufactured Week 27 of Year 2016 Week 27 of Year 2016
Module Part # BLS8G3D1609DS1S00. BLS8G3D1609DS1S00.
Module Revision 0x100 0x100
Module Serial # 0xFDAD05F3 0xFDAD05F5
Module Manufacturing Location 15 15
# of Row Addressing Bits 16 16
# of Column Addressing Bits 10 10
# of Banks 8 8
# of Ranks 2 2
Device Width in Bits 8 8
Bus Width in Bits 64 64
Module Voltage 1.5V 1.5V
CAS Latencies Supported 5 6 7 8 9 10 11 5 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC) 9-9-9-24 9-9-9-24
Maximum frequency (MHz) 800 800
Maximum Transfer Speed (MHz) DDR3-1600 DDR3-1600
Maximum Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum Clock Cycle Time, tCK (ns) 1.250 1.250
Minimum CAS Latency Time, tAA (ns) 11.250 11.250
Minimum RAS to CAS Delay, tRCD (ns) 11.250 11.250
Minimum Row Precharge Time, tRP (ns) 11.250 11.250
Minimum Active to Precharge Time, tRAS (ns) 30.000 30.000
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) 48.750 48.750
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) 260.000 260.000
DDR3 Specific SPD Attributes
Write Recovery Time, tWR (ns) 15.000 15.000
Internal Write to Read Command Delay, tWTR (ns) 7.500 7.500
Internal Read to Precharge Command Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Activate Window in units of tREFI 0 0
RZQ / 6 Supported No No
RZQ / 7 Supported Yes Yes
DLL-Off Mode Supported Yes Yes
Maximum Operating Temperature Range (C) 0-95 0-95
Refresh Rate at Extended Operating Temperature Range 2X 2X
Auto-self Refresh Supported Yes Yes
On-die Thermal Sensor Readout Supported No No
Partial Array Self Refresh Supported No No
Thermal Sensor Present No No
Non-standard SDRAM Type Standard Monolithic Standard Monolithic
Maxium Activate Count (MAC)
Module Type UDIMM UDIMM
Module Height (mm) 30 30
Module Thickness (front), (mm) 2 2
Module Thickness (back), (mm) 2 2
Module Width (mm) 133.5 133.5
Reference Raw Card Used Raw Card B Rev. 0 Raw Card B Rev. 0
DRAM Manufacture Micron Technology Micron Technology
XMP Attributes
XMP Revision 1.3 1.3
Enthusiast / Certified Profile
Module voltage 1.50V 1.50V
Clock speed (MHz) 800 800
Transfer Speed (MHz) DDR3-1600 DDR3-1600
Bandwidth (MB/s) PC3-12800 PC3-12800
Minimum clock cycle time, tCK (ns) 1.250 1.250
Supported CAS latencies 5 6 7 8 9 10 11 5 6 7 8 9 10 11
Minimum CAS latency time, tAA (ns) 11.250 11.250
Minimum RAS to CAS delay time, tRCD (ns) 11.250 11.250
Minimum row precharge time, tRP (ns) 11.250 11.250
Minimum active to precharge time, tRAS (ns) 30.000 30.000
Supported timing at highest clock speed 9-9-9-24 9-9-9-24
Minimum Row Active to Row Active Delay, tRRD (ns) 6.000 6.000
Minimum Active to Auto-Refresh Delay, tRC (ns) 46.250 46.250
Minimum Recovery Delay, tRFC (ns) 260.000 260.000
Minimum Write Recovery time, tWR (ns) 15.000 15.000
Minimum Write to Read CMD Delay, tWTR (ns) 7.500 7.500
Minimum Read to Pre-charge CMD Delay, tRTP (ns) 7.500 7.500
Minimum Four Activate Window Delay, tFAW (ns) 30.000 30.000
Maximum Average Periodic Refresh Interval, tREFI (us) 7.875 7.875
Write to Read CMD Turn-around Time Optimizations No adjustment No adjustment
Read to Write CMD Turn-around Time Optimizations No adjustment No adjustment
Back 2 Back CMD Turn-around Time Optimizations No adjustment No adjustment
System CMD Rate Mode 2T 2T