Memory Summary For VISHWA-HP
Number of Memory Devices: 2 Total Physical Memory: 7650 MB (8192 MB)
Total Available Physical Memory: 5270 MB
Memory Load: 31%
| Item | Slot #1 | Slot #2 |
|---|
| Ram Type |
DDR3 |
DDR3 |
| Maximum Clock Speed (MHz) |
800 (JEDEC) |
800 (JEDEC) |
| Maximum Transfer Speed (MHz) |
DDR3-1600 |
DDR3-1600 |
| Maximum Bandwidth (MB/s) |
PC3-12800 |
PC3-12800 |
| Memory Capacity (MB) |
4096 |
4096 |
| Jedec Manufacture Name |
Hynix Semiconductor (Hyundai Electronics) |
Hynix Semiconductor (Hyundai Electronics) |
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| SPD Revision |
1.1 |
1.1 |
| Registered |
No |
No |
| ECC |
No |
No |
| DIMM Slot # |
1 |
2 |
| Manufactured |
Week 10 of Year 2012 |
Week 10 of Year 2012 |
| Module Part # |
HMT351S6CFR8C-PB |
HMT351S6CFR8C-PB |
| Module Revision |
0x4E30 |
0x4E30 |
| Module Serial # |
0x4AEC6CF |
0x47EC6B6 |
| Module Manufacturing Location |
1 |
1 |
| # of Row Addressing Bits |
15 |
15 |
| # of Column Addressing Bits |
10 |
10 |
| # of Banks |
8 |
8 |
| # of Ranks |
2 |
2 |
| Device Width in Bits |
8 |
8 |
| Bus Width in Bits |
64 |
64 |
| Module Voltage |
1.5V |
1.5V |
| CAS Latencies Supported |
5 6 7 8 9 10 11 |
5 6 7 8 9 10 11 |
| Timings @ Max Frequency (JEDEC) |
11-11-11-28 |
11-11-11-28 |
| Maximum frequency (MHz) |
800 |
800 |
| Maximum Transfer Speed (MHz) |
DDR3-1600 |
DDR3-1600 |
| Maximum Bandwidth (MB/s) |
PC3-12800 |
PC3-12800 |
| Minimum Clock Cycle Time, tCK (ns) |
1.250 |
1.250 |
| Minimum CAS Latency Time, tAA (ns) |
13.125 |
13.125 |
| Minimum RAS to CAS Delay, tRCD (ns) |
13.125 |
13.125 |
| Minimum Row Precharge Time, tRP (ns) |
13.125 |
13.125 |
| Minimum Active to Precharge Time, tRAS (ns) |
35.000 |
35.000 |
| Minimum Row Active to Row Active Delay, tRRD (ns) |
6.000 |
6.000 |
| Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) |
48.125 |
48.125 |
| Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) |
160.000 |
160.000 |
| |
|
|
| DDR3 Specific SPD Attributes |
|
|
| Write Recovery Time, tWR (ns) |
15.000 |
15.000 |
| Internal Write to Read Command Delay, tWTR (ns) |
7.500 |
7.500 |
| Internal Read to Precharge Command Delay, tRTP (ns) |
7.500 |
7.500 |
| Minimum Four Activate Window Delay, tFAW (ns) |
30.000 |
30.000 |
| RZQ / 6 Supported |
Yes |
Yes |
| RZQ / 7 Supported |
Yes |
Yes |
| DLL-Off Mode Supported |
Yes |
Yes |
| Maximum Operating Temperature Range (C) |
0-95 |
0-95 |
| Refresh Rate at Extended Operating Temperature Range |
2X |
2X |
| Auto-self Refresh Supported |
Yes |
Yes |
| On-die Thermal Sensor Readout Supported |
No |
No |
| Partial Array Self Refresh Supported |
No |
No |
| Thermal Sensor Present |
No |
No |
| Non-standard SDRAM Type |
Standard Monolithic |
Standard Monolithic |
| Module Type |
SO-DIMM |
SO-DIMM |
| Module Height (mm) |
30 |
30 |
| Module Thickness (front), (mm) |
2 |
2 |
| Module Thickness (back), (mm) |
2 |
2 |
| Module Width (mm) |
67.6 |
67.6 |
| Reference Raw Card Used |
Raw Card F Rev. 0 |
Raw Card F Rev. 0 |
| DRAM Manufacture |
Hynix Semiconductor (Hyundai Electronics) |
Hynix Semiconductor (Hyundai Electronics) |