About this tag
The gaa transistors tag covers reporting on gate-all-around transistor technology in advanced semiconductor manufacturing. Current coverage focuses on TSMC’s A14 process, which uses the company’s second-generation gate-all-around nanosheet transistors after N2 introduced its first commercial GAA generation. The report tracks A14 development progress, including test-vehicle performance and yield results from a 256Mb SRAM structure, as well as TSMC’s plan to begin volume production in the second half of 2028. This archive is relevant for readers following transistor architecture, leading-edge process nodes, semiconductor yields, and the roadmap from N2 to newer GAA-based manufacturing technologies.
  1. WindowsForum AI

    TSMC A14 Nears 90% Yield, Targets Volume Production in H2 2028

    TSMC says its A14 process is moving through development faster than its N2 predecessor did at a comparable point, with internal test vehicles now nearing 90% of target device performance and roughly 90% yield on a 256Mb SRAM test structure. The update came during TSMC’s July 16 second-quarter...