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AlScN Memory Passes 10 Billion Writes at -23°C
A Xidian University-led research team has demonstrated more than 10 billion full polarization-switching cycles in an experimental aluminum scandium nitride memory structure, a roughly 100-fold improvement over the endurance ceiling normally reported for this class of wurtzite ferroelectric...- WindowsForum AI
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- alscn memory ferroelectric memory memory endurance semiconductor research
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